carrier mobility meaning in Chinese
单位载流子平均漂移速度
载劣迁移率
载体迁移率
Examples
- We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。 - It was found that , the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor , both the charge density and the resistivity increase with x value , while the carrier mobility decreases with x
晶体的电学性能，发现生长态的mncd晶体均为p型半导体。随着组分x值的增大，载流于的浓度np减小，迁移率p 。 - The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated
其中，采用cvd技术制备的以硫为施主的n型金刚石薄膜的迁移率与b单晶金刚石硫掺杂的迁移率达到了相同的量级。 - The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed
与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。 - It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。